Snubberless balancement of series connected insulated gate devices by a novel gate control strategy

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1997-October, Issue , 1997, Pages 968-974

  Galluzzo, A ^a   Belverde, G ^a   Melito, M ^a   Musumeci, S ^a   Raciti, A ^b  

^a STMICROELECTRONICS   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); POWER QUALITY; BIPOLAR TRANSISTORS; COMPUTER SIMULATION; MOSFET DEVICES; POWER CONVERTERS; VOLTAGE CONTROL;

EXPERIMENTAL TEST; GATE-DRIVE SIGNAL; HIGH VOLTAGE APPLICATIONS; HIGH VOLTAGE POWER CONVERTERS; SERIES CONNECTIONS; SERIES-CONNECTED; SWITCHING BEHAVIORS; SWITCHING TRANSIENT;

MOSFET DEVICES; GATES (TRANSISTOR);

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); NOVEL GATE CONTROL STRATEGY;

EID: 0031358434     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/63.903998     Document Type: Conference Paper

References (7)

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