Memory characteristics of Au/PZT/BIT/p-Si ferroelectric diode

Science in China, Series B: Chemistry

Volumn 44, Issue 3, 2001, Pages 274-279

  Wang, Hua ^a,b   Yu, Jun ^a   Dong, Xiaomin ^a   Zhou, Wenli ^a   Wang, Yunbo ^a   Zheng, Yuankai ^b   Zhao, Jianhong ^a  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b GUILIN UNIVERSITY OF ELECTRONIC TECHNOLOGY   (China)

Author keywords

Bi4 Ti3O12; Ferroelctric films; Memory diode; Pb(Zr0.52Ti0.48)O3

Indexed keywords

COERCIVE FORCE; CURRENT DENSITY; FERROELECTRIC DEVICES; HYSTERESIS; POLARIZATION; PULSED LASER DEPOSITION; REMANENCE;

FERROELECTRIC DIODES;

SEMICONDUCTOR DIODES;

EID: 0035364140     PISSN: 10069291     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02916704     Document Type: Article

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