Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (1 0 0) GaAs

Optical Materials

Volumn 17, Issue 1-2, 2001, Pages 207-210

  Prete, P ^a   Lovergine, N ^b   Tapfer, L ^c   Mancini, A M ^b  

^a IME CNR   (Italy)

^b INFM   (Italy)

^c Centro Nazionale per la Ricerca e lo Sviluppo dei Materiali   (Italy)

Author keywords

MOVPE; Structural properties; X ray diffraction; ZnMgSe; ZnSe ZnMgSe MQWs

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL LATTICES; DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

ZINC MAGNESIUM SELENIDE; ZINC SELENIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035361118     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(01)00082-9     Document Type: Conference Paper

References (9)