Photoluminescence measurements on undoped CdZnTe grown by the high-pressure Bridgman method

Journal of Electronic Materials

Volumn 30, Issue 6, 2001, Pages 603-607

  Suzuki, K ^a   Seto, S ^b   Sawada, T ^a   Imai, K ^a   Adachi, M ^c   Inabe, K ^c  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^c KANAZAWA UNIVERSITY   (Japan)

Author keywords

Bound exciton lifetime; CdZnTe; Rate equation; Time resolved photoluminescence

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; EXCITONS; HIGH PRESSURE EFFECTS; PHOTOLUMINESCENCE; STOICHIOMETRY;

EXCITON EMISSION; HIGH PRESSURE BRIDGMAN METHOD; PHOTOLUMINESCENCE MEASUREMENTS;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0035359841     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF02665841     Document Type: Article

References (18)