Aluminum single-electron transistors studied at 0.3 K in different transport regimes

Journal of Applied Physics

Volumn 89, Issue 11 I, 2001, Pages 6545-6547

  Buonomo, B ^a,b   Castellano, M G ^a,b   Leoni, R ^a,b   Mattioli, F ^a,b   Torrioli, G ^a,b   Carelli, P ^c   Chiarello, F ^c   Cosmelli, C ^d  

^a CNR   (Italy)

^b INFM   (Italy)

^c UNIVERSITY OF L'AQUILA   (Italy)

^d SAPIENZA UNIVERSITY OF ROME   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035356744     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1361236     Document Type: Article

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