Driving spectral resolution to the noise limit in semiconductor gamma detector arrays

IEEE Transactions on Nuclear Science

Volumn 48, Issue 3 I, 2001, Pages 520-523

  Lachish, U ^a  

^a Guma Science Rehovot   (Israel)

Author keywords

Amplifiers; Cadmium alloys; Charge carrier processes; Gamma ray spectroscopy detectors; Planar arrays; Semiconductor devices

Indexed keywords

AMPLIFIERS (ELECTRONIC); CADMIUM ALLOYS; ELECTRON TRANSITIONS; GAMMA RAYS; PHOTONS; SEMICONDUCTOR DEVICES; SPURIOUS SIGNAL NOISE;

GAMMA-RAY SPECTROSCOPY DETECTORS;

RADIATION DETECTORS;

EID: 0035355386     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.940110     Document Type: Conference Paper

References (9)

1. Charge transport in arrays of semiconductor gamma-ray detectors
2. Signals induced in semiconductor gamma-ray imaging detectors
3. Currents to conductors induced by moving point charge
4. Currents induced by electron motion
5. Multi-element CdZnTe detectors for gamma ray detection and imaging
6. Optimum spectroscopic performance from CZT- and X-ray detectors with pad and strip segmentation
7. CZT pixel-detectors equipped with effective Ohmic contacts; Their spectroscopic performance and the enigma of why they thus behave
8. Spectroscopy with CdZnTe-and X-ray detectors by modifying the electron trapping to compensate for incomplete charge collection caused by large hole trapping