Nonlinear photogalvanic effect induced by monopolar spin orientation of holes in QWs

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 10, Issue 1-3, 2001, Pages 52-56

  Ganichev, S D ^a,b   Danilov, S N ^b   Bel'kov, V V ^c   Ivchenko, E L ^c   Ketterl, H ^a   Vorobjev, L E ^b   Bichler, M ^d   Wegscheider, W ^a   Prettl, W ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

Monopolar spin orientation; Photogalvanic effect

Indexed keywords

ELECTRON ENERGY LEVELS; INFRARED RADIATION; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

MONOPOLAR SPIN ORIENTATION; PHOTOGALVANIC EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035336479     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00052-2     Document Type: Article

References (10)