AlGaInP microcavity light-emitting diodes at 650 nm on Ge substrates

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 957-959

  Modak, P ^a   D'Hondt, M ^b   Delbeke, D ^a   Moerman, I ^a   Van Daele, P ^a   Baets, R ^a   Demeester, P ^a   Mijlemans, P ^b  

^a GHENT UNIVERSITY   (Belgium)

^b Union Miniere Bus Grp Adv Mat   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MIRRORS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; SPONTANEOUS EMISSION; SUBSTRATES;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; DISTRIBUTED BRAGG REFLECTOR; MICROCAVITY LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0343664404     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867973     Document Type: Article

References (7)

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7. P. Modak, J. Derluyn, M. D'Hondt, P. Mijlemans, I. Moerman, and P. Demeester, "High-quality AlGaInP layers on GaAs and Ge grown by MO VPE," in Proc. 8th Eur. Workshop MO VPE, 1999, pp. 139-142.