Dependence of temperature gradient on growth rate in CZ silicon

Journal of Crystal Growth

Volumn 225, Issue 2-4, 2001, Pages 221-224

  Natsume, A ^a   Inoue, N ^a   Tanahashi, K ^a   Mori, A ^b  

^a Osaka Prefecture University   (Japan)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

A1. Convection; A1. Heat transfer; A1. Interfaces; A2. Czochralski method; B2. Semiconducting silicon

Indexed keywords

CRYSTAL GROWTH FROM MELT; HEAT CONVECTION; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMAL GRADIENTS;

HEAT BALANCE EQUATION;

SEMICONDUCTING SILICON;

EID: 0035335157     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00837-5     Document Type: Conference Paper

References (7)