Coherent amorphization of Ge/Si multilayers with ion beams

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 178, Issue 1-4, 2001, Pages 279-282

  Alves, E ^a   Sequeira, A D ^a   Franco, N ^a   Da Silva, M F ^a   Soares, J C ^a   Sobolev, N A ^b   Carmo, M C ^b  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Amorphization; Ion implantation; Superlattice

Indexed keywords

AMORPHIZATION; DEFECTS; ION BEAMS; ION IMPLANTATION; PHASE TRANSITIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS;

ION FLUENCE; X RAY SCATTERING;

SEMICONDUCTOR SUPERLATTICES;

EID: 0035334741     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00480-8     Document Type: Conference Paper

References (11)