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Volumn 248-249, Issue , 1997, Pages 289-292

On the amorphization of the Si/Ge superlattices upon ion bombardment

Author keywords

Amorphization; Germanium; Ion Implantation; Silicon; Superlattice

Indexed keywords

AMORPHIZATION; ION BOMBARDMENT; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY;

EID: 0030693531     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (6)

References (10)
  • 9
  • 10
    • 0346003810 scopus 로고
    • J. F. Gibbons, Proc. IEEE 56, 295 (1968); 60, 1062 (1972)
    • (1972) Proc. IEEE , vol.60 , pp. 1062


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.