SCOPUS 정보 검색 플랫폼

Volumn 225, Issue 2-4, 2001, Pages 249-256

Preparation conditions of chromium doped ZnSe and their infrared luminescence properties

(11) Burger, A a Chattopadhyay, K a Ndap, J O a Ma, X a Morgan, S H a Rablau, C I b Su, C H c Feth, S c Page, Ralph H d Schaffers, Kathleen I d Payne, Stephen A d

a FISK UNIVERSITY (United States)

b WEST VIRGINIA UNIVERSITY (United States)

c NASA MARSHALL SPACE FLIGHT CENTER (United States)

d LAWRENCE LIVERMORE NATIONAL LABORATORY (United States)

Author keywords

A1. Diffusion; A1. Doping; A2. Growth from vapor; B1. Zinc compounds; B2. Semiconducting II VI materials; B3. Solid state lasers

Indexed keywords

CHROMIUM; DIFFUSION IN SOLIDS; PHOTOLUMINESCENCE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLID STATE LASERS; VAPORS;

PHYSICAL VAPOR TRANSPORT METHOD; ZINC SELENIDE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0035334542 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)00845-4 Document Type: Conference Paper

Times cited : (71)

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