The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 751-754

  Cao, Xin ^a   Zeng, Yiping ^a   Kong, Meiying ^a   Pan, Liang ^a   Wang, Baoqiang ^a   Zhu, Zhanping ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

Molecular beam epitaxy; Photoluminescence; Pseudomorphic HEMTs

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

GATE RECESS DEPTH;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035333265     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00032-6     Document Type: Article

References (5)