Characterization of Si wafer surfaces after wet chemical treatment by the microwave reflectance photconductivity decay method with surface electric field

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3069-3074

  Tada, Atsushi ^a   Hirano, Masashi ^a   Ichimura, Masaya ^a   Arai, Eisuke ^a   Takamatsu, Hiroyuki ^b   Sumie, Shingo ^b  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b KOBE STEEL LTD   (Japan)

Author keywords

Carrier lifetime; Chemical treatment; Surface recombination; PCD

Indexed keywords

ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRODES; FERMI LEVEL; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROWAVES; PHOTOCONDUCTIVITY; REFLECTION; WETTING;

MICROWAVE REFLECTANCE PHOTOCONDUCTIVITY DECAY;

SILICON WAFERS;

EID: 0035328425     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.3069     Document Type: Article

References (13)