A power amplifier with efficiency improved using defected ground structure

IEEE Microwave and Wireless Components Letters

Volumn 11, Issue 4, 2001, Pages 170-172

  Lim, Jong Sik ^a   Kim, Ho Sup ^b   Park, Jun Seok ^b   Ahn, Dal ^b   Nam, Sangwook ^a  

^a Seoul National University   (South Korea)

^b Soonchunhyang University   (South Korea)

Author keywords

Defected ground structure; Harmonic tuned power amplifiers; Harmonic tuning; Power amplifiers

Indexed keywords

FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; MICROSTRIP LINES; PERMITTIVITY; PRINTED CIRCUIT BOARDS; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; TUNING;

DEFECTED GROUND STRUCTURE; GALLIUM ARSENIDE FET AMPLIFIERS; HARMONIC TUNED POWER AMPLIFIERS; HARMONIC TUNING;

POWER AMPLIFIERS;

EID: 0035322290     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/7260.916333     Document Type: Letter

References (8)

1. RF power amplifiers, classed A through S: How the circuits operate, how to design them, and when to use each - Short course
2. High-efficiency class F GaAs FET amplifier operating with very low bias voltage for use in mobile telephones at 1.75GHz
3. A compact high power amplifier for handy phones
4. Broad power amplifier using dielectric photonic bandgap structure
5. A novel 1-D periodic defected ground structure for planar circuits
6. Modeling of a photonic bandgap and its application for the low-pass filter design