Navigating yield through the maze of copper CMP defects

Solid State Technology

Volumn 44, Issue 4, 2001, Pages 63-64+67

  Guha, S ^a   Sethuraman, A ^a   Gotkis, Y ^a   Kistler, R ^a   Steckenrider, S ^a  

^a KLA TENCOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DEFECTS; DEPOSITS; DIELECTRIC MATERIALS; GRAIN BOUNDARIES; MICROCRACKS; PITTING; SURFACES;

COPPER CHEMICAL MECHANICAL POLISHING; COPPER DUAL DAMASCENE TECHNOLOGY; METAL RESIDUALS; SCRATCHES;

CHEMICAL MECHANICAL POLISHING;

EID: 0035311388     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (7)

1. Physics of light scattering
2. Copper metallization of semiconductor interconnects-Issues and prospects