Cu-CMP for dual damascene technology: Prestonian vs. non-Prestonian regimes of Cu removal

Journal of Electronic Materials

Volumn 30, Issue 4, 2001, Pages 396-399

  Gotkis, Y ^a,b   Guha, S ^a,c  

^a SpeedFam IPEC   (United States)

^b LAM RESEARCH CORPORATION   (United States)

^c INTEL CORPORATION   (United States)

Author keywords

Copper dual damascene technology; Cu CMP; Mechanism of Cu removal; Non Prestonian removal rate trend

Indexed keywords

COPPER; DIELECTRIC PROPERTIES; INTEGRATED CIRCUITS; PRESSURE EFFECTS; REMOVAL; SLURRIES;

DUAL DAMASCENE TECHNOLOGY; INTERCONNECTS;

CHEMICAL MECHANICAL POLISHING;

EID: 0035306541     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0050-y     Document Type: Article

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