Illumination effect on switching performance of a triangular-barrier resonant-tunnelling diode

IEE Proceedings: Optoelectronics

Volumn 148, Issue 2, 2001, Pages 121-123

  Guo, D F ^a  

^a DEPARTMENT OF ELECTRONIC ENGINEERING   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LIGHTING; RESONANT TUNNELING; SEMICONDUCTOR QUANTUM WELLS;

ILLUMINATION EFFECT; TRIANGULAR BARRIER RESONANT TUNNELING DIODES;

LIGHT EMITTING DIODES;

EID: 0035303359     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20010068     Document Type: Article

References (13)

1. Experimental demonstration of single peak IV characteristics in a novel resonant tunneling diode
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3. Optical switching mechanism based on charge accumulation effects in resonant tunneling diodes
4. Resonant tunneling in semiconductor double barriers
5. 0.47As/AIAs resonant-tunneling diodes measured by electro-optic sampling technique
6. Novel bistable device; resonant-tunneling triangular-barrier optoelectronic switch RTOPS
7. InGaAs-InAlAs multiple quantum well optical bistable devices using the resonant tunneling effect
8. Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes
9. Transient analysis of a triangular-barrier bulk unipolar diode
10. Planar-doped barriers in GaAs by molecular beam epitaxy
11. Optically controlled resonant tunneling in a double-barrier diode
12. Optically switched resonant tunneling diodes
13. High-speed resonant-tunneling photodetectors with low-switching energy