Experimental demonstration of single peak IV characteristics in a novel resonant tunneling diode

IEEE Electron Device Letters

Volumn 17, Issue 10, 1996, Pages 491-493

  Arai, Kunihiro ^b   Yamamoto, Masafumi ^a,b  

^a IEEE

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRODES; ELECTRON TUNNELING; MOLECULAR BEAM EPITAXY; PHOTOLITHOGRAPHY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

RESONANT TUNNELING PINCH OFF DIODES; SINGLE PEAK IV CHARACTERISTICS;

TUNNEL DIODES;

EID: 0030270571     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.537085     Document Type: Article

References (11)

1. F. Capasso, S. Sen, F. Beltram, L. M. Lunardi, A. S. Vengurlekar, P. R. Smith, N. J. Shah, R. J. Malik, and A. Y. Cho, "Quantum functional devices: Resonant-tunneling transistors, circuits with reduced complexity, and multiple-valued logic," IEEE Trans. Electron Devices vol. 36, pp. 2065-2082, 1989.
2. K. Maezawa, T. Akeyoshi, and T. Mizutani, "Functions and applications of monostable-bistable transition logic elements (MOBILE's) having multiple-input terminals," IEEE Trans. Electron Devices, vol. 41, pp. 148-154, 1994.
3. M. Takatsu, K. Imamura, T. Mori, T. Adachihara, S. Muto, and N. Yokoyama, "Logic circuits using multi-emitter resonant tunneling hot-electron transistors (RHET's)," in Dig. Tech. Papers 1994 ISSCC, pp. 124-125.
4. N. Yokoyama, K. Imamura, S. Muto, S. Hiyamizu, and H. Nishi," A new functional, resonant-tunneling hot electron transistor (RHET)," Jpn. J. Appl. Phys., vol. 24, pp. L853-L854, 1985.
5. T. Waho, K. Maezawa, and T. Mizutani, "Clear negative characteristics observed in coupled-quantum-well base resonant tunneling transistors," IEEE Electron Device Lett., vol. 14, pp. 202-204, 1993.
6. T. K. Woodward, T. C. McGill, H. F. Chung, and R. D. Burnham, "Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor," Appl. Phys. Lett., vol. 51, pp. 1542-1544, 1987.
7. S. Tehrani, J. Shen, H. Goronkin, G. Kramer, R. Tsui, and T. X. Zhu, "Resonant interband tunneling quantum functional device," in Proc. 21th Int. Symp. Compound Semiconductors, San Diago, CA, 1994, pp. 855-860, and "Resonant interband tunneling FET," IEEE Electron Device Lett., vol. 16, pp. 557-559, 1995.
8. S. Tehrani, J. Shen, H. Goronkin, G. Kramer, R. Tsui, and T. X. Zhu, "Resonant interband tunneling quantum functional device," in Proc. 21th Int. Symp. Compound Semiconductors, San Diago, CA, 1994, pp. 855-860, and "Resonant interband tunneling FET," IEEE Electron Device Lett., vol. 16, pp. 557-559, 1995.
9. K. Arai and M. Yamamoto, "Proposal and analysis of resonant tunnelling diode with single peaked IV characteristics," Electron. Lett., vol. 31, pp. 1615-1616, 1995.
10. T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, and H. Q. Le, "Microwave and millimeter-wave resonant tunnelling devices," in Physics of Quantum Electron Devices, F. Capasso, Ed. Berlin: Springer Verlag, 1989, p. 148.
11. K. J. Chen, K. Maezawa, and M. Yamamoto, "InP-based highperformance monostable-bistable transition logic elements (MOBILE's) using integrated multiple-input resonant-tunneling devices," IEEE Electron Device Lett., vol, 17, pp. 127-129, 1996.