Orientation and temperature dependence of electron-induced crystallization in Si and Ge

Materials Research Society Symposium - Proceedings

Volumn 540, Issue , 1999, Pages 67-72

  Hollar, E P ^a   Robertson, I M ^a   Jencic I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; CRYSTALLIZATION; ELECTRON ENERGY LEVELS; EPITAXIAL GROWTH; GERMANIUM; ION IMPLANTATION; SILICON; SUBSTRATES; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS ZONES; ELECTRON INDUCED CRYSTALLIZATION; THRESHOLD DISPLACEMENT ENERGY;

ELECTRON IRRADIATION;

EID: 0032592225     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (11)

1. J.S. Williams, in Surface Modification and Alloying, edited by J.M. Poate, G. Foti, and D.C. Jacobson (Plénum Press, New York, 1983) p. 133.
2. F. Priolo and E. Rimini, Mat.Sci.Rep. 5,319 (1990).
3. F. Corticelli, G. Lulli, and P.G. Merli, Phil.Mag.Lett. 61,101 (1990).
4. M.O. Ruault, J. Chaumont, J.M. Pennison, and A Bourret, Phil.Mag. A 50,667 (1984).
5. L. Csepregi, E.F. Kennedy, J.W. Mayer and T.W. Sigmon, J.Appl.Phys. 49,3906 (1978).
6. F. Spaepen and D. Turnbull, in: Laser Annealing of Semiconductors, edited by J.M. Poate and J.W. Mayer (Academic Press, New York, 1982), 15.
7. J.S. Custer, A. Battaglia, M. Saggio and F. Priolo, Nuc.Inst.Meth. B 80/81, 881 (1993).
8. I. JenCic, M.W. Bench, I.M. Robertson and M.A. Kirk, J.Appl.Phys. 78,974 (1995).
9. M.W. Bench, O.K. Tappin and I.M. Robertson, Phil.Mag.Lett. 66, 39 (1992).
10. I.M. Robertson and I. Jencic, J.Nuc.Mat. 239,273 (1996).
11. V.S. Vavilov, A.E. Kiv, and O.R. Niyazova, Phys.Stat.SoIidi A 32, 11 (1975).