Correlation between Er-luminescent centers and defects in Si co-implanted with Er and O

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 208-213

  Nakashima, K ^a   Eryu, O ^a   Akiyama, H ^a   Maeda, Y ^a   Ebisu, H ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Erbium; Ion implantation; Oxygen; Photoluminescence; Solid phase epitaxy

Indexed keywords

COPPER; CRYSTAL DEFECTS; EPITAXIAL GROWTH; ERBIUM; ION IMPLANTATION; PHOTOLUMINESCENCE; SEGREGATION (METALLOGRAPHY);

LUMINESCENT CENTERS;

SEMICONDUCTING SILICON;

EID: 0035302928     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00671-6     Document Type: Conference Paper

References (13)