Shift of transition between partially and fully-depleted behavior in SOI MOSFET due to radiation

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 3, 2001, Pages 358-361

  Wan, X H ^a   Zhang, X ^a   Huang, R ^a   Gan, X W ^a   Wang, Y Y ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Radiation characteristics; SOI MOSFET

Indexed keywords

MODELS; RADIATION; SILICON ON INSULATOR TECHNOLOGY; SIMULATION;

RADIATION CHARACTERISTICS; TOTAL DOSE IONIZING EFFECT;

MOSFET DEVICES;

EID: 0035284313     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. Ionizing radiation effects in MOS devices and circuits
2. A short-channel SOI MOSFET model including total dose effects