A physical model of floating body effects in fully depleted silicon-on-insulator nMOSFET

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 17, Issue 5, 1996, Pages 339-346

  Xi, Xuemei ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FLOTATION; MODELS; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON ON INSULATOR TECHNOLOGY;

FILM SOI; FLOATING BODY EFFECTS;

MOSFET DEVICES;

EID: 0030134997     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (17)