Modeling charge-carrier transport and generation-recombination mechanisms in p+n+ a-Si tunnel junctions

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 147-153

  Furlan, J ^a   Gorup, Z ^a   Smole, F ^a   Topic, M ^a  

^a UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONTACTS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ELECTRON TUNNELING; MATHEMATICAL MODELS; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS;

THERMAL CAPTURE; TUNNEL JUNCTIONS; TUNNELING TRANSITIONS;

AMORPHOUS SILICON;

EID: 0035254376     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00167-7     Document Type: Article

References (8)

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