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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 2, 2001, Pages 388-396

High density diffusion barrier of ionized metal plasma deposited Ti in Al-0.5% Cu/Ti/SiO2/Si structure

(6) Li, S a Lee, Y K a Gao, W c White, T b Dong, Z L a Latt, K Maung a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b Inst of Environ Sci/Engineering (Singapore)

c NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; HIGH TEMPERATURE OPERATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SPUTTERING; STRUCTURE (COMPOSITION); TITANIUM; TRANSMISSION ELECTRON MICROSCOPY;

ANISOTROPIC DIFFUSION PROPERTIES; HIGH DENSITY DIFFUSION BARRIER; IONIZED METAL PLASMA DEPOSITION; SCANNING TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM ALLOYS;

EID: 0035272788 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1347048 Document Type: Article

Times cited : (10)

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