Liquid phase epitaxial growth of 3C-SiC films deposited on Si

Diamond and Related Materials

Volumn 10, Issue 3-7, 2001, Pages 1255-1258

  Chen, Zhiming ^a   Ma, Jianping ^a   Lu, Gang ^a   Lei, Tianmin ^a   Yu, Mingbin ^a   Hang, Lianmao ^a   Feng, Xianfeng ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

3C SiC; Carbide; Characterization; Crystal Growth

Indexed keywords

BINDING ENERGY; CRYSTAL DEFECTS; CRYSTALS; EPITAXIAL GROWTH; RAMAN SPECTROSCOPY; SILICON; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

INDUCTIVE HEATER;

THIN FILMS;

SILICON CARBIDE;

EID: 0035269288     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00484-2     Document Type: Article

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