Fabrication of ZnTe: Cu films and their properties

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 22, Issue 2, 2001, Pages 171-176

  Zheng, J G ^a   Zhang, J Q ^a   Cai, W ^a   Li, B ^a   Cai, Y P ^a   Feng, L H ^a  

^a SICHUAN UNIVERSITY   (China)

Author keywords

Fabrication; Films; Measurement

Indexed keywords

COPPER; DEPOSITION; IONIZATION; VACUUM APPLICATIONS; ZINC ALLOYS;

CUBIC STRUCTURE; HEXAGONAL STRUCTURE; POLYCRYSTALLINE FILM;

THIN FILMS;

EID: 0035261735     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (10)

1. ZnTe: A potential interlayer to form low resistant back contacts in CdS/CdTe solar cells
2. Polycrystalline cadmium telluride n-i-p solar cell
3. RF sputtered films of Cu-doped and N-doped ZnTe
4. Development of RF sputtered Cu-doped ZnTe for use as a contact interface layer to P-CdTe
5. Dependence of material properties of radio-frequency magnetron-sputtered Cu-doped ZnTe thin films on deposition conditions
6. The structural, optical and electrical properties of vacuum evaporated Cu-Doped ZnTe polycrystalline thin films
7. Properties of ZnTe: Cu thin films and CdS/CdTe/ZnTe solar cells
8. Development of Cu-doped ZnTe as a back-contact interface layer for thin film CdS/CdTe solar cells
9. Time-resolved temperature measurements during laser-induced synthesis of Cu-Te compounds