19.6% electron-irradiated GaInP/GaAs cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn 2, Issue , 1994, Pages 2108-2111

  Kurtz, Sarah R ^a   Bertness, K A ^a   Friedman, D J ^a   Kibbler, A E ^a   Kramer, C ^a   Olson, J M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN; EFFICIENCY; ELECTRONS; FIBER OPTICS; IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SIMULATORS;

AIR MASS ZERO; BEGINNING-OF-LIFE EFFICIENCY; DAMAGE COEFFICIENT; ELECTRON IRRADIATION; END-OF-LIFE EFFICIENCY; GALLIUM INDIUM PHOSPHIDE; PHOTO CURRENTS; SHUNTING; TOP-CELL THICKNESS;

SOLAR CELLS;

EID: 0028720033     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)