Characteristics of Al0.36Ga0.64As/GaAs tandem solar cells with pp-n-n structural AlGaAs solar cells

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 517-524

  Takahashi, Ken ^a   Yamada, Shigeki ^a   Minagawa, Yasushi ^a   Unno, Tsunehiro ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; HEAT TREATMENT; LIGHT ABSORPTION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS;

CURRENT MATCHING; TANDEM SOLAR CELLS;

SOLAR CELLS;

EID: 0035254626     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00232-4     Document Type: Article

References (7)

1. J.C.C. Fan, B.-Y. Tsaur, B.J. Palm, Optimum design of high efficiency tandem solar cells, Proceedings of the 16th IEEE Photovoltaic Specialists Conference, 1982, pp. 692-701.
2. Chung B.-C., Virshup G.F., Hikido S., Kaminar N.R. Appl. Phys. Lett. 55(17):1989;1741.
3. -n Structure, Technical Digest 11th International Photovoltaic Science and Engineering Conference, 1999, pp. 427-428.
4. Takahashi K., Yamada S., Unno T., Kuma S. Sol. Energy Mater. Sol. Cells. 50:1998;169.
5. L.C. Olsen, D.A. Huber, C. Bajgar, G. Dunham, F.W. Addis, PC-1D modeling of depletion layer recombination in GaAs solar cells, Proceedings of the 21st IEEE Photovoltaic Specialists Conference, 1990, pp. 415-419.
6. Takamoto T., Ikeda E., Kurita H. Appl. Phys. Lett. 70(3):1997;381.
7. Bertness K.A., Kurtz S.R., Friedman D.J., Kibbler A.E., Kramer C., Olson J.M. Appl. Phys. Lett. 65(8):1994;989.