Microstructure effects on quantum efficiency in PtSi/p-Si(1 0 0) Schottky barrier detector

Materials Chemistry and Physics

Volumn 68, Issue 1-3, 2001, Pages 17-21

  Horng, Gwo Ji ^a,b   Chang, Chun Yen ^a   Chang, Tsu ^b   Ho, Chia ^b   Wu, Chung Sen ^b  

^a Institute of Electronics   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; HIGH RESOLUTION ELECTRON MICROSCOPY; PLATINUM COMPOUNDS; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

SCHOTTKY BARRIER DETECTORS (SBD);

SCHOTTKY BARRIER DIODES;

EID: 0035254309     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(00)00350-3     Document Type: Article

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