High growth-rate fabrication of micro-crystalline silicon by Helicon wave plasma CVD

Solar Energy Materials and Solar Cells

Volumn 66, Issue 1-4, 2001, Pages 283-288

  Endo, Koji ^a   Isomura, Masao ^a   Taguchi, Mikio ^a   Tarui, Hisaki ^a   Kiyama, Seiichi ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FILM GROWTH; FILM PREPARATION; PLASMA DENSITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; VOLUME FRACTION;

CRYSTALLINE VOLUME FRACTION; HELICON WAVE PLASMA; MICROCRYSTALLINE SILICON;

CRYSTALLINE MATERIALS;

EID: 0035253921     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(00)00185-9     Document Type: Article

References (4)

1. Meier J.et al. Mater. Res. Symp. Proc. 420:1996;3.
2. K. Saito et al., Proceedings of the Second World Conference on Photovoltaic Energy Conversion, Vienna, Austria, 1998, p. 351.
3. J. Meier et al., Proceedings of the Second World Conference on Photovoltaic Energy Conversion, Vienna, Austria, 1998, p. 375.
4. R.W. Boswell et al., Proceedings of the 21st International Conference Phenomena in Ionized Gases, Bochum, 1993, p. 118.