Diffusion and aggregation of Si implant in (1 0 0) single-crystal SrTiO3

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 173, Issue 4, 2001, Pages 436-440

  Sakaguchi, Isao ^a   Hishita, Shunichi ^a   Haneda, Hajime ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; DIFFUSION IN SOLIDS; ELECTRIC POTENTIAL; ION IMPLANTATION; NIOBIUM; PRECIPITATION (CHEMICAL); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SINGLE CRYSTALS; THERMAL EFFECTS;

STRONTIUM TITANATE;

STRONTIUM COMPOUNDS;

EID: 0035252260     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00410-9     Document Type: Article

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