Imaging of the lateral GOI-defect distribution in silicon MOS wafers with lock-in IR-thermography

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 39-42

  Huth, S ^a   Breitenstein, O ^a   Lambert, U ^b   Huber, A ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b SILTRONIC AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; GATES (TRANSISTOR); SEMICONDUCTOR GROWTH; SILICON WAFERS; THERMOGRAPHY (IMAGING);

GATE OXIDE INTEGRITY (GOI) DEFECTS;

MOSFET DEVICES;

EID: 0035247973     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00145-1     Document Type: Article

References (5)

1. Fusegawa I., Takano K., Kimura M., Fujimaki N. Mater Sci Forum. 196-201:1995;1683.
2. Huth S., Breitenstein O., Huber A., Lambert U. Localization of GOI defects in silicon MOS structures with lock-in IR-thermography. J Appl Phys. 88:2000;4000.
3. Klein N., Gafni H. IEEE Trans Electron Devices. 13:1966;281.
4. Breitenstein O., Langenkamp M., Altmann F., Katzer D., Lindner A., Eggers H. Microscopic lock-in thermography investigation of leakage sites in integrated circuits. Rev Sci Instr. 71:2000;4155.
5. Langenkamp M, Breitenstein O. In: Sopori BL, editor. Proceedings of the Ninth Workshop on Crystalline Silicon Solar Cell Materials and Processes. Breckenridge, USA, Golden CO: NREL, August 1999. p. 198.