Dislocations in Si generated by fatigue at room temperature

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 113-115

  Kato, N I ^a   Nishikawa, A ^a   Saka, H ^b  

^a IBM JAPAN LTD   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); FAILURE ANALYSIS; FATIGUE OF MATERIALS; FOCUSING; ION BEAMS; LEAKAGE CURRENTS; MOLECULAR VIBRATIONS; SEMICONDUCTOR JUNCTIONS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

CYCLIC DEFORMATIONS; ULTRASONIC VIBRATIONS;

SEMICONDUCTING SILICON;

EID: 0035247657     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00128-1     Document Type: Article

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