Investigation of recombination parameters in silicon structures by infrared and microwave transient absorption techniques

Semiconductor Science and Technology

Volumn 12, Issue 1, 1997, Pages 1-10

  Gaubas, E ^a   Kaniava, A ^a   Vaitkus, J ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; APPROXIMATION THEORY; CARRIER CONCENTRATION; CHARGE CARRIERS; ELECTRIC EXCITATION; ELECTROMAGNETIC WAVE ABSORPTION; INFRARED RADIATION; MICROELECTRONICS; MICROWAVES; PHOTOCONDUCTIVITY; SEMICONDUCTOR DOPING; SILICON WAFERS;

CARRIER TRAPPING; NEUTRON TRANSMUTATION DOPED WAFERS; RECOMBINATION PARAMETERS;

SEMICONDUCTING SILICON;

EID: 0030672251     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/1/002     Document Type: Article

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