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Volumn 43, Issue 6, 1997, Pages 411-414

Barrier height of MIS-tunnel diode in presence of exponential distribution of deep level impurities

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC SPACE CHARGE; IMPURITIES; MIS DEVICES;

EID: 0031274435     PISSN: 03772063     EISSN: 0974780X     Source Type: Journal    
DOI: 10.1080/03772063.1997.11416011     Document Type: Article
Times cited : (1)

References (14)
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    • Winfried, M.1
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    • Control of the Schottky barrier using an ultrathin interface metal layer
    • X, Wu, M T, Schmidt & E S, Yang, Control of the Schottky barrier using an ultrathin interface metal layer, Appl Phys Lett, vol 54, no 3, January 1989.
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    • Wu, X.1    Schmidt, M.T.2    Yang, E.S.3
  • 5
    • 0026136817 scopus 로고
    • Control of barrier height MIS tunnel diode using deep level impurities
    • P, Chattopadhyay & K, Das, Control of barrier height MIS tunnel diode using deep level impurities, Solid State Electronics, vol 34, p 367, 1991.
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    • Chattopadhyay, P.1    Das, K.2
  • 6
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    • Effect of deep level impurities on the open circuit voltage of MIS-Solar Cell
    • P, Chattopadhyay & K, Das, Effect of deep level impurities on the open circuit voltage of MIS-Solar Cell, Semiconductor Science and Technology, vol 8, p 1605, 1994.
    • (1994) Semiconductor Science and Technology , vol.8 , pp. 1605
    • Chattopadhyay, P.1    Das, K.2
  • 8
    • 0004120509 scopus 로고
    • A study of the electrical and photovoltaic properties of magnetron sputtered Ti//p-InP, Schottky barriers
    • R L, Van Meirhaeghe, L M O, van Den Berghe, W H, Laflere & F, Cardon, A study of the electrical and photovoltaic properties of magnetron sputtered Ti//p-InP, Schottky barriers, Solid State Electronics, vol 31, no 11, pp 1629–1634, 1988.
    • (1988) Solid State Electronics , vol.31 , Issue.11 , pp. 1629-1634
    • Van Meirhaeghe, R.L.1    van Den Berghe, L.M.O.2    Laflere, W.H.3    Cardon, F.4
  • 9
    • 0001039832 scopus 로고
    • Effect of deep traps on the capacitance voltage plots of Schottky-barrier diodes: Application to the study of sputtered etched Ti-W/n-Si diodes
    • D, Bauza, Effect of deep traps on the capacitance voltage plots of Schottky-barrier diodes:Application to the study of sputtered etched Ti-W/n-Si diodes, J Appl Phys, vol 73, no 4, pp 1858–1865, 1993.
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  • 10
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    • Schottky barrier formation at single cyrstal Metal-Semiconductor interfaces
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  • 11
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    • Correlation of Schottky barriers height and microstructure in epitaxial Ni Silicide
    • M, Liehr, P E, Schmid, F K, Le Crees & P S, Ho, Correlation of Schottky barriers height and microstructure in epitaxial Ni Silicide, Phys Rev Lett, vol 54, p 2139, 1985.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.