Exchange-enhanced Landé g-factor, effective disorder and collapse of spin-splitting in a two-dimensional GaAs electron system

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 12, Issue 1-4, 2002, Pages 424-427

  Huang, Tsai Yu ^a   Cheng, Yu Ming ^a   Liang, C T ^a   Kim, Gil Ho ^b   Leem, J Y ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

g Factor; GaAs; Spin

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ABSORPTION; ELECTRON GAS; HALL EFFECT; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SEMICONDUCTING GALLIUM ARSENIDE; TRANSPORT PROPERTIES;

TWO-DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 0035239595     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(01)00326-5     Document Type: Conference Paper

References (11)