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Volumn 31, Issue 9, 1997, Pages 941-946

Photoelectric properties of GaAs/InAs heterostructures with quantum dots

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0010226445     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187139     Document Type: Article
Times cited : (7)

References (22)
  • 11
    • 0001173722 scopus 로고
    • I. A. Karpovich, V. Ya. Aleshkin, A. V. Anshon, T. S. Babushkina, B. N. Zvonkov, and I. G. Malkina, Fiz. Tekh. Poluprovodn. 24, 2172 (1990) [Sov. Phys. Semicond. 24, 1346 (1990)].
    • (1990) Sov. Phys. Semicond. , vol.24 , pp. 1346
  • 13
    • 0040185925 scopus 로고
    • I. A. Karpovich, V. Ya. Aleshkin, A. V. Anshon, N. V. Vaǐdus', L. M. Batukova, B. N. Zvonkov, and S. M. Plankina, Fiz. Tekh. Poluprovodn. 26, 1899 (1992) [Sov. Phys. Semicond. 26, 1065 (1992)].
    • (1992) Sov. Phys. Semicond. , vol.26 , pp. 1065
  • 15
    • 0040185922 scopus 로고    scopus 로고
    • I. A. Karpovich and D. O. Filatov, Fiz. Tekh. Poluprovodn. 30, 959 (1996) [Semiconductors 30, 961 (1996)].
    • (1996) Semiconductors , vol.30 , pp. 961
  • 18
    • 0343772321 scopus 로고
    • V. Ya. Aleshkin, E. V. Demidov, B. N. Zvonkov, A. V. Murel', and O. A. Romanov, Fiz. Tekh. Poluprovodn. 25, 1047 (1991) [Sov. Phys. Semicond. 25, 631 (1991)].
    • (1991) Sov. Phys. Semicond. , vol.25 , pp. 631
  • 21
    • 21344493397 scopus 로고
    • V. Ya. Aleshkin, A. V. Anshon, and I. A. Karpovich, Fiz. Tekh. Poluprovodn. 27, 1344 (1993) [Semiconductors 27, 742 (1993)].
    • (1993) Semiconductors , vol.27 , pp. 742


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.