Surface integrity and removal rate of silicon sputtered with focused ion beam

Machining Science and Technology

Volumn 5, Issue 2, 2001, Pages 239-254

  Hung, N P ^a   Ali, M Y ^a   Fu, Y Q ^a   Ong, N S ^a   Tay, M L ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DOSIMETRY; ION BEAMS; SCANNING; SILICON; SPUTTERING; SURFACE ROUGHNESS;

MATERIAL REMOVAL; PIXEL SPACING;

MICROMACHINING;

EID: 0035198056     PISSN: 10910344     EISSN: None     Source Type: Journal    
DOI: 10.1081/MST-100107845     Document Type: Article

References (12)

1. Recent advances in application of focused ion beam technology
2. Focused ion beam sample preparation of non-semiconductor materials
3. Micro-machining using a focused ion beam
4. Focused ion beam machining of diamond probes-simulation of profile change of probes
5. Development of the micromilling process for high-aspect-ratio microstructures
6. Application of the focused ion beam technique to the direct fabrication of vertical-type field emitters
7. An Ion milling pattern transfer technique for fabrication of three-dimensional micromechanical structures
8. Microfabrication of ultraprecision structures using focused ion beam machining
9. A study on surface roughness in ion-beam machining
10. Fib 601 focused ion beam fabrication of micron-sized apertures for the NASA AXAF X-ray telescope prelaunch calibration