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Volumn 48, Issue 1-4, 1997, Pages 101-107

Effect of hydrogen radical annealing for Si1-xNx : H/SiO2 double-layer passivation

Author keywords

Hydrogen radical annealing; Lifetime; Passivation; Silicon nitride; Surface recombination velocity

Indexed keywords

ANNEALING; PASSIVATION; SILICA; SILICON NITRIDE; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS;

EID: 0031276735     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(97)00077-9     Document Type: Article
Times cited : (5)

References (8)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.