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Volumn 48, Issue 1-4, 1997, Pages 101-107
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Effect of hydrogen radical annealing for Si1-xNx : H/SiO2 double-layer passivation
a a a a a |
Author keywords
Hydrogen radical annealing; Lifetime; Passivation; Silicon nitride; Surface recombination velocity
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Indexed keywords
ANNEALING;
PASSIVATION;
SILICA;
SILICON NITRIDE;
SPECTROSCOPIC ANALYSIS;
THERMAL EFFECTS;
HYDROGEN RADICAL ANNEALING;
SURFACE RECOMBINATION VELOCITY;
SILICON SOLAR CELLS;
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EID: 0031276735
PISSN: 09270248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0927-0248(97)00077-9 Document Type: Article |
Times cited : (5)
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References (8)
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