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Volumn 134, Issue 1, 2001, Pages 10-16
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Fabrication of new type field effect transistors using charge transfer complex layers
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ABSORPTION SPECTROSCOPY;
CHARGE TRANSFER;
ELECTRIC CONDUCTIVITY;
ELECTRIC POTENTIAL;
INFRARED SPECTROSCOPY;
SEMICONDUCTING FILMS;
SEMICONDUCTOR DEVICE MANUFACTURE;
TRANSCONDUCTANCE;
CHARGE TRANSFER COMPLEX LAYERS;
FIELD EFFECT TRANSISTORS;
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EID: 0035193176
PISSN: 04247760
EISSN: None
Source Type: Journal
DOI: 10.1002/1520-6416(20010115)134:1<10::AID-EEJ2>3.0.CO;2-D Document Type: Article |
Times cited : (7)
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References (9)
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