Automated photolithography critical dimension controls in a complex, mixed technology, manufacturing fab

IEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings

Volumn 2, Issue , 2001, Pages 33-40

  Schneider, Craig ^a   Smyth, John ^a   Watts, Andrew ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

APC; Automation; CD Control; Critical Dimension; Photolithography; Productivity

Indexed keywords

ALGORITHMS; AUTOMATION; COMPUTER CONTROL SYSTEMS; FEEDBACK CONTROL; KNOWLEDGE BASED SYSTEMS; PHOTOLITHOGRAPHY; PROCESS CONTROL; PRODUCTIVITY;

AUTOMATED CONTROL SYSTEMS; CRITICAL DIMENSION (CD) CONTROL;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0035186911     PISSN: 1523553X     EISSN: None     Source Type: Journal    
DOI: 10.1109/ASMC.2001.925612     Document Type: Article

References (7)

1. Strategic differences of IC production: Challenges when switching between DRAM and ASIC fabrication
2. Optical proximity effects correction at 0.25um incorporating process variation in lithography
3. Characterizing exposure tool optics in the fab
4. Impact of gate linewidth variation on chip performance
5. New optimization concepts for photolithography production processes
6. Analysis of reticle contributions to CD uniformity for 0.25um DUV lithography
7. CD control of step and repeat versus step and scan DUV lithography for sub 0.25um gate printing