(Sub-)100 nm gate patterning using 248nm alternating PSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4409, Issue 1, 2001, Pages 61-69

  Vandenberghe, G ^a   Jaenen, P ^a   Jonckheere, R ^a   Ronse, K ^a   Toublan, O ^b  

^a IMEC   (Belgium)

^b MENTOR GRAPHICS CORPORATION   (United States)

Author keywords

Alternating PSM; CD control; Design conversion; KrF

Indexed keywords

CHROMIUM; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); INTEGRATED CIRCUIT LAYOUT; MASKS;

ALTERNATING PHASE SHIFT MASKS; DARK FIELD DOUBLE EXPOSURE; GATE PATTERNING; PHASE SHIFT DESIGN; POLY GATES; RETICLE CHROME DIMENSIONS;

PHOTOLITHOGRAPHY;

EID: 0035180001     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.438406     Document Type: Article

References (8)