Broadband class-E power amplifier for space radar application

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 209-212

  Quach, T ^a   Watson, P ^a   Okamura, W ^a   Kaneshiro, E ^a   Gutierrez Aitken, A ^a   Block, T ^a   Eldredge, J ^a   Jenkins, T ^a   Kehias, L ^a   Oki, A ^a   Sawdai, D ^a   Welch, R ^a   Worley, R ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; ELECTRIC LINES; HETEROJUNCTION BIPOLAR TRANSISTORS; MOLECULAR BEAM EPITAXY; RADAR SYSTEMS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

SPACE RADAR;

POWER AMPLIFIERS;

EID: 0035166145     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Class E - A new class of high-efficiency tuned single - Ended switching power amplifiers
2. A 10 GHz high efficiency active antenna
3. Ultra-efficient X-band and linear efficient ka-band power amplifiers using indium phosphide double heterojunction bipolar transistors
4. The transmission line high efficiency class-E amplifier
5. Transmission line load network topology for class-E power amplifiers
6. InP heterojunction bipolar transistor (HBT) technology for power applications
7. Large signal modelling of HBT's including self-heating and transit time effects