PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2001, Pages 75-78

  Hirayama, T ^a   Matsuno, N ^a   Fujii, M ^a   Hida, H ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC DISTORTION; INTERMODULATION; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

ADJACENT LEAKAGE POWER RATIO (ACPR); INTERMODULATION DISTORTION (IMD);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035162870     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 42% high efficiency two- stage HBT power amplifier MMIC for W-CDMA cellular phone system
2. A miniature 44% efficiency GaAs HBT power amplifier MMIC for the W-CDMA application
3. IMD elimination and ACPR improvement for an 800 MHz HBT MMIC power amplifier
4. A microwave miniaturized linearizer using a parallel diode with a bias feed resistance
5. High efficiency, wide dynamic range variable gain and power amplifier MMICs for wide-band CDMA handsets
6. Effect of gain expansion on power HBTs