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Volumn 286, Issue 1-2, 1999, Pages 279-283

Influence of high hydrostatic pressure-high temperature treatment on defect structure of AlGaAs layers

(10) Bak Misiuk J a Adamczewska, J a Domagala J a Zytkiewicz, Z R a Trela, J a Misiuk, A b Leszczynski M c Jun, J c Surma, H B b Wnuk, A b

a INSTITUTE OF PHYSICS (Poland)

b ukasiewicz Research Network Institute of Microelectronics and Photonics (Poland)

c INSTITUTE OF HIGH PRESSURE PHYSICS (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; DIFFUSION IN SOLIDS; DISLOCATIONS (CRYSTALS); HIGH PRESSURE EFFECTS IN SOLIDS; HIGH TEMPERATURE EFFECTS; HYDROSTATIC PRESSURE; LATTICE CONSTANTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; X RAY CRYSTALLOGRAPHY;

ALUMINUM GALLIUM ARSENIDE; MISFIT DISLOCATIONS;

HETEROJUNCTIONS;

EID: 0344339737 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-8388(98)01021-4 Document Type: Article

Times cited : (12)

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