Enhanced subthreshold leakage current due to impact ionization in deep sub-100nm N-channel double-gate MOSFETs

IEEE International SOI Conference

Volumn , Issue , 2001, Pages 147-148

  Park, J K ^a   Deshpande, H V ^a   Woo, J C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; GATES (TRANSISTOR); IMPACT IONIZATION; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

SUBTHRESHOLD CURRENT;

MOSFET DEVICES;

EID: 0035159882     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)