Kondo effect in a quantum dot with even number of electrons: Zero-bandwidth approach

Solid State Communications

Volumn 117, Issue 7, 2001, Pages 429-434

  Allub, R ^a   Proetto, C R ^a  

^a INSTITUTO BALSEIRO   (Argentina)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; NANOSTRUCTURED MATERIALS;

KONDO EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035151920     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(00)00486-5     Document Type: Article

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