IGBT module technology with high partial discharge resistance

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 3, Issue , 2001, Pages 1899-1904

  Mitic, G ^a   Licht, T ^a   Lefranc, G ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CERAMIC MATERIALS; ELECTRIC DISCHARGES; ELECTRIC FIELD EFFECTS; ELECTRIC INSULATION; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; INTERFACES (MATERIALS); METALLIZING; RELIABILITY;

ELECTRIC FIELD STRENGTH; ELECTRIC INSULATION FAILURE; HIGH PARTIAL DISCHARGE RESISTANCE;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 0035149024     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. 6.5-kV IGBT-modules
2. Multichip high-power IGBT modules for traction and industrial applications
3. Insulation voltage test and partial discharge test of 3.3-kV IGBT modules
4. Insulation voltage test and partial discharge test of 3.3-kV IGBT-modules
5. Electronic power converters
6. Dielectric breakdown in aluminium nitride
7. Localization of electric-insulation and partial-discharge failures of IGBT modules with partial discharge spectroscopy
8. Electric strength of insulating materials - Test methods - Part 1: Tests at power frequencies
9. An SCLC model including diffusion
10. Photo-induced degradation of a-Si:H diodes with an nin structure