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Volumn 37, Issue 1, 2001, Pages 57-58

Electro-thermal resonance in MOSFET devices

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC IMPEDANCE; RESONANCE; WAVEFORM ANALYSIS;

EID: 0035127335     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010045     Document Type: Article
Times cited : (6)

References (3)
  • 1
    • 0032660225 scopus 로고    scopus 로고
    • Exploiting electro-thermal resonance in high voltage power bipolar devices
    • D'AMORE, D., and MAFFEZZONI, P.: 'Exploiting electro-thermal resonance in high voltage power bipolar devices', Electron. Lett., 1999, 35, (7), pp. 600-602
    • (1999) Electron. Lett. , vol.35 , Issue.7 , pp. 600-602
    • D'Amore, D.1    Maffezzoni, P.2
  • 2
    • 0034276316 scopus 로고    scopus 로고
    • Analysis of fast electro-thermal dynamics in power BJT
    • D'AMORE, D., and MAFFEZZONI, P.: 'Analysis of fast electro-thermal dynamics in power BJT', IEEE Trans. Electron Devices, 2000, 47, (9), pp. 1758-1763
    • (2000) IEEE Trans. Electron Devices , vol.47 , Issue.9 , pp. 1758-1763
    • D'Amore, D.1    Maffezzoni, P.2
  • 3
    • 0025699582 scopus 로고
    • Electrical transient study of negative resistance in SOI MOS transistors
    • LE NEEL, O., and HAOND, M.: 'Electrical transient study of negative resistance in SOI MOS transistors', Electron. Lett., 1990, 26, (1), pp. 73-74
    • (1990) Electron. Lett. , vol.26 , Issue.1 , pp. 73-74
    • Le Neel, O.1    Haond, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.